SUD50P04-13L-GE3 Vishay, SUD50P04-13L-GE3 Datasheet - Page 4

• Manufacturer Part Number: SUD50P04-13L-GE3
• Description: MOSFET P-CH D-S 40V DPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD50P04-13L-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 55.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 3120pF @ 25V
• Power - Max: 78W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -60A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 10.5mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -3V
• Power Dissipation Pd: 3W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUD50P04-13L-GE3TR

SUD50P04-13L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
THERMAL RATINGS
www.vishay.com
4
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.01
75
60
45
30
15
0.1
0
- 50 - 25
2
1
0
10
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
V
I
On-Resistance vs. Junction Temperature
Limited By Package
D
GS
= 30 A
25
Maximum Avalanche Drain Current
= 10 V
Single Pulse
T
0
J
T
50
C
- Junction Temperature (°C)
vs. Case Temperature
- Case Temperature (°C)
25
10
- 3
75
50
75
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
10
125
- 2
125
150
150
Square Wave Pulse Duration (sec)
New Product
175
175
10
- 1
200
100
0.1
10
100
1
0.1
1
10
1
0
Limited by r
V
Source-Drain Diode Forward Voltage
DS
0.3
V
T
Single Pulse
SD
DS(on)
J
T
- Drain-to-Source Voltage (V)
= 150 °C
C
10
1
- Source-to-Drain Voltage (V)
= 25 °C
Safe Operating Area
0.6
S-71660-Rev. B, 06-Aug-07
0.9
10
Document Number: 73009
100
T
J
= 25 °C
1.2
10 µs
100 µs
1 ms
10 ms
100 ms
DC
100
1 K
1.5