SUD50P04-13L-GE3 Vishay, SUD50P04-13L-GE3 Datasheet - Page 3

• Manufacturer Part Number: SUD50P04-13L-GE3
• Description: MOSFET P-CH D-S 40V DPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD50P04-13L-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 55.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 3120pF @ 25V
• Power - Max: 78W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -60A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 10.5mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -3V
• Power Dissipation Pd: 3W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUD50P04-13L-GE3TR

TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 73009
S-71660-Rev. B, 06-Aug-07
5000
4500
4000
3500
3000
2500
2000
1500
1000
100
500
80
60
40
20
80
70
60
50
40
30
20
10
0
0
0
0
0
0
C
rss
10
V
V
2
8
V
DS
DS
GS
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Output Characteristics
V
Transconductance
GS
20
16
4
Capacitance
= 10 thru 5 V
125 °C
C
2 V
C
oss
iss
30
24
6
T
C
= - 55 °C
4 V
3 V
40
32
8
25 °C
10
50
40
New Product
0.05
0.04
0.03
0.02
0.01
0.00
100
80
60
40
20
10
0
8
6
4
2
0
0.0
0
0
0.5
V
I
D
DS
V
8
= 50 A
GS
= 20 V
1.0
20
On-Resistance vs. Drain Current
V
= 4.5 V
GS
16
Q
Transfer Characteristics
g
1.5
- Gate-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
- Drain Current (A)
24
2.0
40
25 °C
Gate Charge
SUD50P04-13L
T
2.5
C
32
= 125 °C
Vishay Siliconix
3.0
60
40
3.5
V
GS
48
- 55 °C
www.vishay.com
= 10 V
4.0
80
56
4.5
100
5.0
64
3