SI7145DP-T1-GE3 Vishay, SI7145DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7145DP-T1-GE3
• Description: MOSFET P-CH D-S 30V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7145DP-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 2.3V @ 250µA
• Gate Charge (qg) @ Vgs: 413nC @ 10V
• Input Capacitance (ciss) @ Vds: 15660pF @ 15V
• Power - Max: 104W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Resistance Drain-source Rds (on): 0.0021 Ohms
• Forward Transconductance Gfs (max / Min): 110 S
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: - 60 A
• Power Dissipation: 104 W
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -60A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 3.75mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -2.3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7145DP-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 64814
S09-0872-Rev. A, 18-May-09
0.0035
0.0031
0.0027
0.0023
0.0019
0.0015
100
10
80
60
40
20
0
8
6
4
2
0
0.0
0
0
I
D
= 20 A
On-Resistance vs. Drain Current
V
V
0.5
DS
60
16
GS
V
DS
= 10 V
Output Characteristics
Q
= 10 V thru 4 V
V
g
- Drain-to-Source Voltage (V)
DS
I
- Total Gate Charge (nC)
D
Gate Charge
= 15 V
- Drain Current (A)
120
1.0
32
V
DS
V
= 20 V
V
GS
GS
180
1.5
48
= 4.5 V
= 10 V
V
GS
240
2.0
64
= 3 V
300
2.5
80
20 000
16 000
12 000
8000
4000
1.5
1.3
1.1
0.9
0.7
0.5
10
8
6
4
2
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
I
D
C
= 25 A
oss
0.8
6
V
V
DS
GS
Transfer Characteristics
T
T
0
C
J
T
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
= 125 °C
C
iss
= 25 °C
Capacitance
V
25
1.6
12
GS
= 10 V
50
Vishay Siliconix
2.4
18
V
75
GS
T
Si7145DP
C
= 4.5 V
= - 55 °C
100
www.vishay.com
3.2
24
125
150
4.0
30
3