SI7145DP-T1-GE3 Vishay, SI7145DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7145DP-T1-GE3
• Description: MOSFET P-CH D-S 30V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7145DP-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 2.3V @ 250µA
• Gate Charge (qg) @ Vgs: 413nC @ 10V
• Input Capacitance (ciss) @ Vds: 15660pF @ 15V
• Power - Max: 104W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Resistance Drain-source Rds (on): 0.0021 Ohms
• Forward Transconductance Gfs (max / Min): 110 S
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: - 60 A
• Power Dissipation: 104 W
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -60A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 3.75mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -2.3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7145DP-T1-GE3TR

Si7145DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.1
- 0.4
0.01
100
0.8
0.5
0.2
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
T
SD
0
J
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
I
D
= 250 µA
T
75
J
0.8
= 25 °C
0.01
100
0.1
10
100
Limited by R
1
0.01
I
D
1.0
* V
= 5 mA
Single Pulse
125
T
GS
A
= 25 °C
> minimum V
DS(on)
V
150
1.2
DS
0.1
Safe Operating Area
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
DS(on)
0.015
0.012
0.009
0.006
0.003
0.000
200
160
120
80
40
10
0
0
0 .
is specified
0
0
On-Resistance vs. Gate-to-Source Voltage
1
Single Pulse Power, Junction-to-Ambient
1
1 ms
10 ms
100 ms
1 s
10 s
DC
2
100
V
0.01
GS
- Gate-to-Source Voltage (V)
3
4
Time (s)
0.1
S09-0872-Rev. A, 18-May-09
5
Document Number: 64814
6
7
1
T
I
T
J
D
8
J
= 125 °C
= 25 A
= 25 °C
9
10
1
0