SI7145DP-T1-GE3 Vishay, SI7145DP-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI7145DP-T1-GE3
• Description: MOSFET P-CH D-S 30V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7145DP-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 2.3V @ 250µA
• Gate Charge (qg) @ Vgs: 413nC @ 10V
• Input Capacitance (ciss) @ Vds: 15660pF @ 15V
• Power - Max: 104W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Resistance Drain-source Rds (on): 0.0021 Ohms
• Forward Transconductance Gfs (max / Min): 110 S
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: - 60 A
• Power Dissipation: 104 W
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -60A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 3.75mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -2.3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7145DP-T1-GE3TR

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64814
S09-0872-Rev. A, 18-May-09
125
100
75
50
25
0
0
25
D
Power, Junction-to-Case
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
180
144
108
100
72
36
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
125
25
150
T
C
Package Limited
50
Current Derating*
- Case Temperature (°C)
75
100
3.0
2.4
1.8
1.2
0.6
0.0
0
125
Power Derating, Junction-to-Ambient
25
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
Si7145DP
www.vishay.com
125
150
5