APTM50AM38STG Microsemi Power Products Group, APTM50AM38STG Datasheet

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APTM50AM38STG

Manufacturer Part Number
APTM50AM38STG
Description
MOSFET MOD PHASE LEG SER/PAR SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM50AM38STG

Fet Type
2 N-Channel (Half Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 45A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
5V @ 5mA
Gate Charge (qg) @ Vgs
246nC @ 10V
Input Capacitance (ciss) @ Vds
11200pF @ 25V
Power - Max
694W
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
R
V
MOSFET Power Module
V
E
E
I
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
Series & parallel diodes
D
G1
S1
G2
S2
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
S1
G1
VBUS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Q1
Phase leg
Q 2
0/ VBUS
G2
S2
Parameter
VBUS
OUT
0/VBU S
NT C2
NT C1
NTC2
NTC1
OUT
OUT
www.microsemi.com
Application
Features
Benefits
T
T
T
V
R
I
c
c
c
D
= 25°C
= 80°C
= 25°C
DSS
DSon
= 90A @ Tc = 25°C
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Power MOS 7
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS compliant
-
-
-
-
-
-
-
APTM50AM38STG
= 500V
= 38mΩ typ @ Tj = 25°C
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
Lead frames for power connections
Max ratings
DSon
2500
500
360
±30
694
90
67
45
46
50
®
MOSFETs
Unit
mΩ
mJ
W
V
A
V
A
1 – 7

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APTM50AM38STG Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM50AM38STG V = 500V DSS R = 38mΩ typ @ Tj = 25°C DSon I = 90A @ Tc = 25°C D ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM50AM38STG = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 500V 0V,V = 400V T = 125° ...

Page 3

... Operating Case Temperature C Torque Mounting torque Wt Package Weight Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R Resistance @ 25° 298.15 K 25/  exp B   APTM50AM38STG Test Conditions T = 25° =600V 125° 90° 90A 180A 90A T = 125°C F ...

Page 4

... SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTM50AM38STG ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : www.microsemi.com 4 – 7 ...

Page 5

... Drain to Source Voltage ( (on) vs Drain Current DS 1.20 Normalized to 1.15 V =10V @ 45A GS 1.10 1.05 1.00 0.95 0.90 0.85 0. 100 I , Drain Current (A) D APTM50AM38STG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 250 8V 200 7.5V 150 7V 100 6. 5. Drain Current vs Case Temperature 100 V =10V ...

Page 6

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTM50AM38STG ON resistance vs Temperature 2.5 V =10V GS I =45A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

Page 7

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM50AM38STG 120 td(off) ...

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