APTM50AM38STG Microsemi Power Products Group, APTM50AM38STG Datasheet - Page 3

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APTM50AM38STG

Manufacturer Part Number
APTM50AM38STG
Description
MOSFET MOD PHASE LEG SER/PAR SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM50AM38STG

Fet Type
2 N-Channel (Half Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 45A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
5V @ 5mA
Gate Charge (qg) @ Vgs
246nC @ 10V
Input Capacitance (ciss) @ Vds
11200pF @ 25V
Power - Max
694W
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Parallel diode ratings and characteristics
Thermal and package characteristics
Temperature sensor NTC
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Torque
V
V
B
I
R
T
F(A V)
I
R
V
Q
T
Wt
T
RRM
RM
ISOL
t
STG
25/85
thJC
rr
C
25
rr
F
J
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Resistance @ 25°C
T
25
= 298.15 K
R
T
=
exp
(see application note APT0406 on www.microsemi.com for more information).
B
25
/
85
R
 
25
T
1
25
T
1
www.microsemi.com
 
Test Conditions
V
I
I
I
I
V
di/dt = 600A/µs
T: Thermistor temperature
R
F
F
F
F
To Heatsink
T
R
R
: Thermistor value at T
= 90A
= 180A
= 90A
= 90A
=600V
= 400V
T
T
T
T
T
Transistor
Diode
APTM50AM38STG
T
T
T
j
j
j
j
j
j
j
= 25°C
= 125°C
c
= 125°C
= 125°C
= 125°C
= 25°C
= 25°C
= 90°C
M5
2500
Min
Min
Min
600
-40
-40
-40
2.5
2100
3952
Typ
160
390
Typ
Typ
1.8
1.3
90
85
50
2
Max
Max
0.18
0.45
Max
150
125
100
160
500
750
4.7
2.2
°C/W
Unit
Unit
Unit
N.m
µA
nC
kΩ
A
ns
°C
V
V
K
V
g
3 – 7

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