APTM50AM38STG Microsemi Power Products Group, APTM50AM38STG Datasheet - Page 5

• Manufacturer Part Number: APTM50AM38STG
• Description: MOSFET MOD PHASE LEG SER/PAR SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTM50AM38STG

• Fet Type: 2 N-Channel (Half Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 45A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 246nC @ 10V
• Input Capacitance (ciss) @ Vds: 11200pF @ 25V
• Power - Max: 694W
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
350
300
250
200
150
100
0.2
0.1
50
0.00001
0
0
0
0
Low Voltage Output Characteristics
Normalized to
V
0.9
0.7
0.5
0.05
GS
0.3
0.1
V
V
DS
=10V @ 45A
GS
, Drain to Source Voltage (V)
R
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
=10&15V
5
DS
I
50
D
, Drain Current (A)
(on) vs Drain Current
0.0001
10
100
15
V
GS
=10V
V
150
GS
=20V
20
8V
rectangular Pulse Duration (Seconds)
0.001
7.5V
6.5V
5.5V
7V
www.microsemi.com
6V
Single Pulse
200
25
0.01
250
200
150
100
50
100
APTM50AM38STG
0
80
60
40
20
0
DC Drain Current vs Case Temperature
0
25
V
250µs pulse test @ < 0.5 duty cycle
DS
V
0.1
1
> I
GS
T
D
Transfert Characteristics
, Gate to Source Voltage (V)
(on)xR
50
C
, Case Temperature (°C)
2
T
J
DS
=125°C
3
(on)MAX
75
T
J
=25°C
4
1
100
5
6
125
T
J
=-55°C
7
10
150
8
5 – 7