APTC60AM35SCTG Microsemi Power Products Group, APTC60AM35SCTG Datasheet
APTC60AM35SCTG
Specifications of APTC60AM35SCTG
APTC60AM35SCTGMI
Related parts for APTC60AM35SCTG
APTC60AM35SCTG Summary of contents
Page 1
... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTC60AM35SCTG V = 600V DSS R = 35mΩ max @ Tj = 25°C DSon I = 72A @ Tc = 25°C D Application • ...
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... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTC60AM35SCTG = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 600V 125° 0V,V = 600V j GS ...
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... Torque Mounting torque Wt Package Weight Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R Resistance @ 25° 298.15 K 25/ exp B APTC60AM35SCTG Test Conditions T = 25° =600V 175° 125° 25° 40A 175° 40A, V ...
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... SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTC60AM35SCTG ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : www.microsemi.com 4 – 8 ...
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... V , Drain to Source Voltage ( (on) vs Drain Current DS 1.1 Normalized to V =10V @ 36A GS 1.05 1 0.95 0 Drain Current (A) D APTC60AM35SCTG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 280 V 240 250µs pulse test @ < 0.5 duty cycle 6.5V 200 6V 160 5.5V 120 Drain Current vs Case Temperature ...
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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 1000 Crss 100 Drain to Source Voltage (V) DS APTC60AM35SCTG ON resistance vs Temperature 3.0 V =10V GS 2 72A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 limited by ...
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... Hard Switching 80 ZCS ZVS 60 V =400V DS 40 D=50% R =2.5Ω =125° Drain Current (A) D APTC60AM35SCTG Rise and Fall times vs Current 120 V =400V DS 100 R =2.5Ω =125° L=100µ 120 Drain Current (A) D Switching Energy vs Gate Resistance ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTC60AM35SCTG Single Pulse 0.001 ...