APTC60AM35SCTG Microsemi Power Products Group, APTC60AM35SCTG Datasheet - Page 7

• Manufacturer Part Number: APTC60AM35SCTG
• Description: POWER MODULE MOSFET 600V 72A SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTC60AM35SCTG

• Fet Type: 2 N-Channel (Half Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 36A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 72A
• Vgs(th) (max) @ Id: 3.9V @ 2mA
• Gate Charge (qg) @ Vgs: 518nC @ 10V
• Input Capacitance (ciss) @ Vds: 14000pF @ 25V
• Power - Max: 416W
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTC60AM35SCTGMI; APTC60AM35SCTGMI

160
140
120
100
350
300
250
200
150
100
4.5
3.5
2.5
1.5
0.5
80
60
40
20
50
5
4
3
2
1
0
0
0
15 20 25 30 35 40 45 50 55 60 65
0
0
Operating Frequency vs Drain Current
V
D=50%
R
T
V
R
T
L=100µH
V
R
T
L=100µH
Switching
J
DS
G
J
J
DS
DS
G
G
=125°C
=125°C
Switching Energy vs Current
=125°C
=2.5Ω
=2.5Ω
=2.5Ω
Hard
=400V
=400V
=400V
20
20
Delay Times vs Current
I
I
I
D
D
D
, Drain Current (A)
, Drain Current (A)
, Drain Current (A)
40
40
60
60
E
off
80
80
ZVS
td(off)
td(on)
E
100
100
ZCS
on
120
120
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1000
APTC60AM35SCTG
120
100
100
80
60
40
20
10
0
10
1
8
6
4
2
0
Source to Drain Diode Forward Voltage
0.3
0
Switching Energy vs Gate Resistance
V
R
T
L=100µH
0
DS
J
G
=125°C
=2.5Ω
V
I
T
L=100µH
D
=400V
V
DS
J
=72A
=125°C
Rise and Fall times vs Current
20
SD
0.5
=400V
, Source to Drain Voltage (V)
Gate Resistance (Ohms)
5
I
D
, Drain Current (A)
40
T
0.7
J
=150°C
10
60
0.9
T
J
=25°C
15
80
E
E
1.1
off
on
t
100
20
t
r
1.3
f
120
1.5
25
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