APTC60AM35SCTG Microsemi Power Products Group, APTC60AM35SCTG Datasheet - Page 6
APTC60AM35SCTG
Manufacturer Part Number
APTC60AM35SCTG
Description
POWER MODULE MOSFET 600V 72A SP4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTC60AM35SCTG.pdf
(8 pages)
Specifications of APTC60AM35SCTG
Fet Type
2 N-Channel (Half Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 36A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
72A
Vgs(th) (max) @ Id
3.9V @ 2mA
Gate Charge (qg) @ Vgs
518nC @ 10V
Input Capacitance (ciss) @ Vds
14000pF @ 25V
Power - Max
416W
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APTC60AM35SCTGMI
APTC60AM35SCTGMI
APTC60AM35SCTGMI
100000
10000
1000
100
1.2
1.1
1.0
0.9
0.8
0.7
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
Capacitance vs Drain to Source Voltage
-50 -25
-50 -25
0
Breakdown Voltage vs Temperature
Threshold Voltage vs Temperature
V
T
DS
J
, Junction Temperature (°C)
T
10
, Drain to Source Voltage (V)
C
, Case Temperature (°C)
0
0
25
25 50 75 100 125 150
20
50
30
75 100 125 150
40
Crss
Ciss
Coss
50
www.microsemi.com
1000
APTC60AM35SCTG
100
14
12
10
8
6
4
2
0
10
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Gate Charge vs Gate to Source Voltage
0
1
limited by
R
I
T
-50 -25
D
DS
J
=72A
V
=25°C
on
100
Maximum Safe Operating Area
DS
V
I
T
D
ON resistance vs Temperature
GS
= 72A
J
, Drain to Source Voltage (V)
, Junction Temperature (°C)
=10V
Single pulse
T
T
J
C
Gate Charge (nC)
200
=150°C
=25°C
0
10
25 50 75 100 125 150
300
V
DS
=300V
400
100
V
DS
=120V
V
100 µs
500
DS
10 ms
1 ms
=480V
1000
600
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