APTM120U10SAG Microsemi Power Products Group, APTM120U10SAG Datasheet

MOSFET N-CH 1200V 116A SP6

APTM120U10SAG

Manufacturer Part Number
APTM120U10SAG
Description
MOSFET N-CH 1200V 116A SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM120U10SAG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 58A, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
116A
Vgs(th) (max) @ Id
5V @ 20mA
Gate Charge (qg) @ Vgs
1100nC @ 10V
Input Capacitance (ciss) @ Vds
28900pF @ 25V
Power - Max
3290W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APTM120U10SAGMI
APTM120U10SAGMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APTM120U10SAG
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Absolute maximum ratings
Symbol
R
V
MOSFET Power Module
V
E
E
I
I
P
DSon
I
DM
AR
SK
DSS
AR
AS
S
G
D
GS
Series & parallel diodes
D
SK
G
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Single switch
S
CR1
Parameter
Q1
D
D
www.microsemi.com
Application
Features
Benefits
V
R
I
D
T
T
T
DSS
DSon
c
c
c
= 25°C
= 80°C
= 25°C
= 116A @ Tc = 25°C
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Power MOS 7
Kelvin source for easy drive
Very low stray inductance
High level of integration
AlN substrate for MOSFET improved thermal
performance
Outstanding performance
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
-
-
-
-
-
-
-
= 1200V
= 100mΩ typ @ Tj = 25°C
APTM120U10SAG
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
M5 power connectors
Max ratings
DSon
1200
3290
3200
116
464
±30
120
86
24
50
®
MOSFETs
Unit
mΩ
mJ
W
V
A
V
A
at
high
frequency
1 – 6

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APTM120U10SAG Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM120U10SAG V = 1200V DSS R = 100mΩ typ @ Tj = 25°C DSon I = 116A @ Tc = 25°C D Application • ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM120U10SAG = 25°C unless otherwise specified j Test Conditions Min V = 0V,V = 1200V T = 25° 0V,V = 1000V T = 125°C GS ...

Page 3

... Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM120U10SAG Test Conditions Min 1200 T = 25° =1200V 125° 80°C ...

Page 4

... Drain to Source Voltage ( Drain Current DS(on) 1.4 Normalized to V =10V @ 58A 1.3 GS 1.2 V =10V GS 1.1 1 0.9 0 120 I , Drain Current (A) D APTM120U10SAG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 320 280 7V 240 6V 200 160 5.5V 120 4. Drain Current vs Case Temperature 120 100 ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss Crss 1000 100 Drain to Source Voltage (V) DS APTM120U10SAG ON resistance vs Temperature 2.5 V =10V GS I =58A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM120U10SAG Rise and Fall times vs Current 100 ...

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