APTM120U10SAG Microsemi Power Products Group, APTM120U10SAG Datasheet - Page 5

• Manufacturer Part Number: APTM120U10SAG
• Description: MOSFET N-CH 1200V 116A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM120U10SAG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 58A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 116A
• Vgs(th) (max) @ Id: 5V @ 20mA
• Gate Charge (qg) @ Vgs: 1100nC @ 10V
• Input Capacitance (ciss) @ Vds: 28900pF @ 25V
• Power - Max: 3290W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTM120U10SAGMI; APTM120U10SAGMI

100000
10000
1000
1.15
1.10
1.05
1.00
0.95
0.90
0.85
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Capacitance vs Drain to Source Voltage
-50 -25
-50 -25
0
Threshold Voltage vs Temperature
Breakdown Voltage vs Temperature
V
DS
T
J
, Drain to Source Voltage (V)
T
, Junction Temperature (°C)
10
C
, Case Temperature (°C)
0
0
25 50
25 50 75 100 125 150
20
30
75 100 125 150
40
Coss
Crss
Ciss
50
www.microsemi.com
1000
14
12
10
100
8
6
4
2
0
10
2.5
2.0
1.5
1.0
0.5
0.0
1
APTM120U10SAG
Gate Charge vs Gate to Source Voltage
0
-50 -25
1
I
T
D
limited by R
J
V
I
=116A
D
=25°C
GS
Maximum Safe Operating Area
=58A
V
T
300
ON resistance vs Temperature
DS
=10V
J
, Junction Temperature (°C)
, Drain to Source Voltage (V)
0
V
Gate Charge (nC)
Single pulse
T
T
DS
10
DS
J
C
=600V
600
=150°C
=25°C
25
on
50
V
DS
900
=240V
75 100 125 150
100
100µs
V
1200
DS
10ms
=960V
1ms
1000
1500
1200
5 – 6