APTM120U10SAG Microsemi Power Products Group, APTM120U10SAG Datasheet - Page 6

• Manufacturer Part Number: APTM120U10SAG
• Description: MOSFET N-CH 1200V 116A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM120U10SAG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 58A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 116A
• Vgs(th) (max) @ Id: 5V @ 20mA
• Gate Charge (qg) @ Vgs: 1100nC @ 10V
• Input Capacitance (ciss) @ Vds: 28900pF @ 25V
• Power - Max: 3290W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTM120U10SAGMI; APTM120U10SAGMI

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
175
150
125
100
300
250
200
150
100
75
50
25
50
0
0
16
12
30
8
4
0
30
Operating Frequency vs Drain Current
30
V
D=50%
R
T
T
V
R
T
L=100µH
J
C
DS
G
=125°C
Switching Energy vs Current
V
R
T
L=100µH
=75°C
DS
G
J
=1.2Ω
=125°C
J
=800V
=1.2Ω
DS
G
=800V
=125°C
=1.2Ω
=800V
switching
60
Delay Times vs Current
60
Hard
50
I
I
D
D
I
D
, Drain Current (A)
, Drain Current (A)
, Drain Current (A)
90
90
70
ZCS
120
120
ZVS
E
on
90
150
150
E
t
t
d(on)
d(off)
off
180
180
110
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1000
100
100
10
80
60
40
20
24
20
16
12
1
0
8
4
0.2 0.4 0.6 0.8
30
Source to Drain Diode Forward Voltage
APTM120U10SAG
0
Switching Energy vs Gate Resistance
V
R
T
L=100µH
V
I
T
L=100µH
D
J
DS
V
G
J
Rise and Fall times vs Current
=125°C
DS
=116A
=125°C
=1.2Ω
SD
=800V
=800V
60
T
, Source to Drain Voltage (V)
J
=150°C
Gate Resistance (Ohms)
I
2
D
, Drain Current (A)
90
T
1
4
J
=25°C
120
1.2 1.4 1.6 1.8
150
6
E
E
t
t
r
on
f
off
180
8
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