APTM10TDUM19PG Microsemi Power Products Group, APTM10TDUM19PG Datasheet

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APTM10TDUM19PG

Manufacturer Part Number
APTM10TDUM19PG
Description
MOSFET MOD TRIPLE DUAL SRC SP6-P
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM10TDUM19PG

Fet Type
6 N-Channel (3-Phase Leg)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
21 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
5100pF @ 25V
Power - Max
208W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
G1
S1
S2
G2
R
V
MOSFET Power Module
D1
D2
V
E
E
I
Triple dual common source
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
S1/S2
D 1
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
D 2
S1/S2
G1
G2
S1
S2
G3
S3
S4
G4
D3
D4
S3/S4
D 3
D 4
Parameter
G3
G4
S3
S4
S3/S4
S5/S6
G5
S5
S6
G6
D 5
D5
D6
D 6
G5
G6
S5
S6
S5/S6
www.microsemi.com
Application
Features
Benefits
T
T
T
V
R
I
c
c
c
D
= 25°C
= 80°C
= 25°C
DSS
DSon
APTM10TDUM19PG
= 70A @ Tc = 25°C
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Power MOS V
Kelvin source for easy drive
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
RoHS Compliant
= 100V
-
-
-
-
-
-
-
= 19mΩ typ @ Tj = 25°C
Max ratings
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
Lead frames for power connections
1500
100
300
±30
208
70
50
21
75
30
®
DSon
MOSFETs
Unit
mΩ
mJ
W
V
A
V
A
1 – 7

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APTM10TDUM19PG Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM10TDUM19PG V = 100V DSS R = 19mΩ typ @ Tj = 25°C DSon I = 70A @ Tc = 25°C D ...

Page 2

... Peak Diode Recovery t Reverse Recovery Time rr Q Reverse Recovery Charge rr dv/dt numbers reflect the limitations of the circuit rather than the device itself. ≤ - 70A di/dt ≤ 700A/µ APTM10TDUM19PG = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 100V 125°C ...

Page 3

... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6-P Package outline (dimensions in mm) See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTM10TDUM19PG Min 2500 -40 -40 -40 To heatsink M6 3 www.microsemi.com Typ Max Unit 0.6 ° ...

Page 4

... GS 200 150 100 Drain to Source Voltage ( Drain Current DS(on) 1.6 Normalized to V =10V @ 35A GS 1.4 1 100 150 I , Drain Current (A) D APTM10TDUM19PG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 125 100 Drain Current vs Case Temperature =10V =20V 200 ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 Ciss Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTM10TDUM19PG ON resistance vs Temperature 2.5 V =10V 35A 2.0 D 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM10TDUM19PG 160 V ...

Page 7

... APTM10TDUM19PG www.microsemi.com 7 – 7 ...

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