APTM10TDUM19PG Microsemi Power Products Group, APTM10TDUM19PG Datasheet - Page 6

• Manufacturer Part Number: APTM10TDUM19PG
• Description: MOSFET MOD TRIPLE DUAL SRC SP6-P
• Manufacturer: Microsemi Power Products Group

Specifications of APTM10TDUM19PG

• Fet Type: 6 N-Channel (3-Phase Leg)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 21 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 5100pF @ 25V
• Power - Max: 208W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.75
0.25
120
100
300
250
200
150
100
0.5
80
60
40
20
50
0
0
0
13
0
0
Operating Frequency vs Drain Current
V
R
T
L=100µH
V
R
T
L=100µH
DS
J
G
DS
G
J
=125°C
=125°C
=5Ω
=5Ω
=66V
Switching Energy vs Current
=66V
20
20
E
25
on
Delay Times vs Current
I
D
I
I
D
, Drain Current (A)
D
, Drain Current (A)
, Drain Current (A)
40
40
switching
Hard
38
60
60
ZCS
50
80
80
t
E
d(off)
V
D=50%
R
T
T
off
t
d(on)
DS
J
C
G
ZVS
=125°C
=75°C
=5Ω
100
100
63
=66V
E
on
120
120
75
www.microsemi.com
APTM10TDUM19PG
1000
100
160
140
120
100
1.5
0.5
10
80
60
40
20
1
1
0
0
0.3
Switching Energy vs Gate Resistance
0
0
Source to Drain Diode Forward Voltage
V
I
T
L=100µH
V
R
T
L=100µH
D
DS
J
J
=70A
V
DS
G
=125°C
=125°C
=5Ω
SD
Rise and Fall times vs Current
=66V
=66V
0.5
10
20
, Source to Drain Voltage (V)
Gate Resistance (Ohms)
T
I
J
D
=150°C
0.7
, Drain Current (A)
20
40
T
0.9
60
30
J
=25°C
1.1
80
40
E
off
t
t
r
E
f
1.3
100
on
50
120
1.5
60
6 – 7