APTM10TDUM19PG Microsemi Power Products Group, APTM10TDUM19PG Datasheet - Page 4

• Manufacturer Part Number: APTM10TDUM19PG
• Description: MOSFET MOD TRIPLE DUAL SRC SP6-P
• Manufacturer: Microsemi Power Products Group

Specifications of APTM10TDUM19PG

• Fet Type: 6 N-Channel (3-Phase Leg)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 21 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 5100pF @ 25V
• Power - Max: 208W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
0.7
0.6
0.5
0.4
0.3
0.2
0.1
300
250
200
150
100
0.00001
1.6
1.4
1.2
0.8
50
0
0
1
0
Low Voltage Output Characteristics
0
0.9
0.7
0.5
0.3
Normalized to
V
0.1
0.05
GS
V
DS
=10V @ 35A
4
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
, Drain to Source Voltage (V)
50
R
V
I
DS(on)
D
GS
8
, Drain Current (A)
=15V, 10V & 9V
0.0001
100
vs Drain Current
12
16
150
V
GS
=10V
20
V
GS
200
0.001
=20V
24
rectangular Pulse Duration (Seconds)
8V
7V
6V
250
28
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Single Pulse
0.01
APTM10TDUM19PG
125
100
70
60
50
40
30
20
10
75
50
25
0
0
DC Drain Current vs Case Temperature
25
0
V
250µs pulse test @ < 0.5 duty cycle
0.1
DS
V
1
> I
GS
T
50
Transfert Characteristics
C
D
T
, Gate to Source Voltage (V)
(on)xR
, Case Temperature (°C)
J
=125°C
2
DS
75
3
(on)MAX
T
J
T
=25°C
4
J
=-55°C
1
100
5
6
125
T
T
J
J
=125°C
=-55°C
7
150
10
8
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