FA57SA50LC Vishay, FA57SA50LC Datasheet - Page 2

• Manufacturer Part Number: FA57SA50LC
• Description: MOSFET N-CH 500V 57A SOT-227
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of FA57SA50LC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 34A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 338nC @ 10V
• Input Capacitance (ciss) @ Vds: 10000pF @ 25V
• Power - Max: 625W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *FA57SA50LC; VS-FA57SA50LC; VS-FA57SA50LC; VSFA57SA50LC; VSFA57SA50LC

FA57SA50LC
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
Notes:
I
I
I
I
V
t
Q
t
V
R
V
g
Q
Q
Q
t
t
t
t
L
C
C
C
SM
on
DSS
GSS
S
rr
d(on)
d(off)
f
r
V
fs
s
SD
GS(th)
(BR)DSS
DS(on)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
R
2
max. junction temperature. ( See fig. 11 )
Starting T
(BR)DSS
G
= 25 , I
/ T
J
J
= 25°C, L = 446µH
AS
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
= 57A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Pulse width
I
T
–––
Min. Typ. Max. Units
SD
Min. Typ. Max. Units
500
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 10000 –––
–––
2.0
–––
–––
–––
–––
–––
43
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
150°C
57A, di/dt
1500 –––
0.62 –––
–––
–––
–––
–––
901 1351
–––
––– 0.08
–––
–––
–––
–––
––– -200
225
152
108
118
5.0
15
51
98
32
50
300µs; duty cycle
200
228
–––
–––
500
338
147
–––
–––
–––
–––
–––
–––
1.3
4.0
23
50
77
57
200A/µs, V
V/°C
µC
ns
µA
nA
nC
ns
nH
pF
V
A
V
V
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
V
Reference to 25°C, I
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
D
D
DD
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 57A
= 57A
= 25°C, I
= 25°C, I
=2.0 (Internal)
= 4.3
= V
= 400V, V
= 0V, I
= 10V, I
= 50V, I
= 500V, V
= 400V
= 10V, See Fig. 6 and 13
= 25V
= 20V
= -20V
= 0V
= 250V
V
2%.
(BR)DSS
GS
, I
D
F
See Fig. 10
S
D
D
Conditions
D
= 57A
= 1.0mA
= 57A, V
Conditions
= 250µA
,
= 34A
= 34A
GS
GS
= 0V, T
= 0V
D
www.irf.com
GS
= 1mA
= 0V
J
= 125°C
S
+L
D
)