FA57SA50LC Vishay, FA57SA50LC Datasheet - Page 4

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FA57SA50LC

Manufacturer Part Number
FA57SA50LC
Description
MOSFET N-CH 500V 57A SOT-227
Manufacturer
Vishay
Series
HEXFET®r
Datasheet

Specifications of FA57SA50LC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
80 mOhm @ 34A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
57A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
338nC @ 10V
Input Capacitance (ciss) @ Vds
10000pF @ 25V
Power - Max
625W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*FA57SA50LC
VS-FA57SA50LC
VS-FA57SA50LC
VSFA57SA50LC
VSFA57SA50LC

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Manufacturer
Quantity
Price
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Manufacturer:
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FA57SA50LC
1000
4
15000
12000
100
9000
6000
3000
0.1
10
1
0.2
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 150 C
J
V
-V
Drain-to-Source Voltage
SD
DS
0.8
Forward Voltage
,Source-to-Drain Voltage (V)
°
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
T = 25 C
J
=
=
=
=
0V,
C
C
C
gs
gd
ds
C
C
C
°
1.4
rss
+ C
+ C
iss
oss
10
f = 1MHz
gd ,
gd
C
ds
2.0
V
SHORTED
GS
= 0 V
2.6
100
1000
100
10
20
16
12
Fig 8. Maximum Safe Operating Area
1
8
4
0
1
0
T
T
Single Pulse
I =
Fig 6. Typical Gate Charge Vs.
D
C
J
= 25 C
= 150 C
57 A
OPERATION IN THIS AREA LIMITED
V
60
DS
°
Q , Total Gate Charge (nC)
°
Gate-to-Source Voltage
G
10
, Drain-to-Source Voltage (V)
120
V
V
V
BY R
DS
DS
DS
= 400V
= 250V
= 100V
180
100
DS(on)
FOR TEST CIRCUIT
SEE FIGURE
240
www.irf.com
10us
100us
1ms
10ms
1000
300
13
10000
360

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