FA57SA50LC Vishay, FA57SA50LC Datasheet - Page 4

• Manufacturer Part Number: FA57SA50LC
• Description: MOSFET N-CH 500V 57A SOT-227
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of FA57SA50LC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 34A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 338nC @ 10V
• Input Capacitance (ciss) @ Vds: 10000pF @ 25V
• Power - Max: 625W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *FA57SA50LC; VS-FA57SA50LC; VS-FA57SA50LC; VSFA57SA50LC; VSFA57SA50LC

FA57SA50LC
1000
4
15000
12000
100
9000
6000
3000
0.1
10
1
0.2
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 150 C
J
V
-V
Drain-to-Source Voltage
SD
DS
0.8
Forward Voltage
,Source-to-Drain Voltage (V)
°
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
T = 25 C
J
=
=
=
=
0V,
C
C
C
gs
gd
ds
C
C
C
°
1.4
rss
+ C
+ C
iss
oss
10
f = 1MHz
gd ,
gd
C
ds
2.0
V
SHORTED
GS
= 0 V
2.6
100
1000
100
10
20
16
12
Fig 8. Maximum Safe Operating Area
1
8
4
0
1
0
T
T
Single Pulse
I =
Fig 6. Typical Gate Charge Vs.
D
C
J
= 25 C
= 150 C
57 A
OPERATION IN THIS AREA LIMITED
V
60
DS
°
Q , Total Gate Charge (nC)
°
Gate-to-Source Voltage
G
10
, Drain-to-Source Voltage (V)
120
V
V
V
BY R
DS
DS
DS
= 400V
= 250V
= 100V
180
100
DS(on)
FOR TEST CIRCUIT
SEE FIGURE
240
www.irf.com
10us
100us
1ms
10ms
1000
300
13
10000
360