FA57SA50LC Vishay, FA57SA50LC Datasheet - Page 3

• Manufacturer Part Number: FA57SA50LC
• Description: MOSFET N-CH 500V 57A SOT-227
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of FA57SA50LC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 34A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 338nC @ 10V
• Input Capacitance (ciss) @ Vds: 10000pF @ 25V
• Power - Max: 625W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *FA57SA50LC; VS-FA57SA50LC; VS-FA57SA50LC; VSFA57SA50LC; VSFA57SA50LC

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1000
1000
100
100
0.1
0.1
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
1
0.1
4
T = 150 C
TOP
BOTTOM
J
V
V
DS
5
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
GS
°
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
4.5V
1
6
T = 25 C
J
7
20µs PULSE WIDTH
T = 25 C
°
V
20µs PULSE WIDTH
J
DS
10
8
= 50V
°
9
100
10
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
-60 -40 -20
Fig 4. Normalized On-Resistance
0.1
Fig 2. Typical Output Characteristics
I =
TOP
BOTTOM
D
57A
V
DS
T , Junction Temperature ( C)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
FA57SA50LC
1
20
40
60
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
4.5V
10
°
V
°
GS
=
10V
3
100