STL85N6F3 STMicroelectronics, STL85N6F3 Datasheet

MOSFET N-CH 60V 19A POWERFLAT5X6

STL85N6F3

Manufacturer Part Number
STL85N6F3
Description
MOSFET N-CH 60V 19A POWERFLAT5X6
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STL85N6F3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.7 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
85A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
3400pF @ 25V
Power - Max
4W
Mounting Type
Surface Mount
Package / Case
PowerFlat™ (6 x 5)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
19 A
Power Dissipation
4 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10882-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STL85N6F3
Manufacturer:
ST
0
Part Number:
STL85N6F3
Manufacturer:
ST
Quantity:
20 000
Features
1. The value is rated according R
Application
Description
This N-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics unique “single feature size”
strip-based process with less critical alignment
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low on
resistance, rugged avalanche characteristics and
low gate charge.
Table 1.
January 2009
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Extremely low on-resistance R
100% avalanche tested
Switching applications
STL85N6F3
Type
Order code
STL85N6F3
Device summary
V
60 V
DSS
N-channel 60 V, 0.005 Ω, 19 A PowerFLAT™ (6x5)
thj-pcb
< 0.0057 Ω 19 A
R
max
DS(on)
DS(on)
Marking
85N6F3
I
D
(1)
Rev 1
Figure 1.
PowerFLAT™ (6x5)
STripFET™ Power MOSFET
Package
Internal schematic diagram
PowerFLAT™ (6x5)
STL85N6F3
Tape and reel
Packaging
Preliminary Data
www.st.com
1/10
10

Related parts for STL85N6F3

STL85N6F3 Summary of contents

Page 1

... This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. R DS(on max < 0.0057 Ω (1) DS(on) Figure 1. Marking 85N6F3 PowerFLAT™ (6x5) Rev 1 STL85N6F3 STripFET™ Power MOSFET PowerFLAT™ (6x5) Internal schematic diagram Package Packaging Tape and reel Preliminary Data 1/10 www.st.com 10 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/10 STL85N6F3 ...

Page 3

... STL85N6F3 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (pulsed) DM (3) I Drain current (continuous (3) I Drain current (continuous (1) P Total dissipation at T TOT (3) P Total dissipation at T TOT ...

Page 4

... Max rating Max rating @125° ± Parameter Test conditions V =25 V, f=1 MHz = = (see Figure 3) Min. Typ 250 µ 8.5A 0.005 0.0057 D Min. Typ. Max. 3400 650 TBD TBD STL85N6F3 Max. Unit V 10 µA 100 µA 200 nA ± V Ω Unit ...

Page 5

... STL85N6F3 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Test circuit Figure 2. Switching times test circuit for resistive load Figure 4. Test circuit for inductive load switching and diode recovery times Figure 6. Unclamped inductive waveform 6/10 Figure 3. Gate charge test circuit Figure 5. Unclamped inductive load test circuit Figure 7. Switching time waveform STL85N6F3 ...

Page 7

... STL85N6F3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® trademark. Package mechanical data 7/10 ...

Page 8

... STL85N6F3 inch Min. Typ. Max. 0.031 0.32 0.036 0.0007 0.0019 0.007 0.013 0.015 0.018 0.196 0.187 0.163 0.165 0.167 0.236 0.226 ...

Page 9

... STL85N6F3 5 Revision history Table 8. Document revision history Date 22-Jan-2009 Revision 1 First release Revision history Changes 9/10 ...

Page 10

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 10/10 Please Read Carefully: © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STL85N6F3 ...

Related keywords