STL85N6F3 STMicroelectronics, STL85N6F3 Datasheet - Page 8

• Manufacturer Part Number: STL85N6F3
• Description: MOSFET N-CH 60V 19A POWERFLAT5X6
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL85N6F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 85A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 3400pF @ 25V
• Power - Max: 4W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (6 x 5)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10882-2

Package mechanical data
8/10
DIM.
D1
D2
A1
A3
E1
E2
E4
A
D
E
b
e
L
0.80
0.35
4.15
3.43
2.58
0.70
Min.
PowerFLAT™(6x5) mechanical data
mm.
0.83
0.02
0.20
0.40
5.00
4.75
4.20
6.00
5.75
3.48
2.63
1.27
0.80
Typ.
Max.
0.93
0.05
0.47
4.25
3.53
2.68
0.90
0.031
0.013
0.163
0.135
0.027
Min.
0.0007
0.007
0.015
0.196
0.187
0.165
0.236
0.226
0.137
0.103
0.031
0.050
0.32
Typ.
inch
STL85N6F3
0.0019
0.036
0.018
0.167
0.139
0.105
0.035
Max.