STL85N6F3 STMicroelectronics, STL85N6F3 Datasheet - Page 4

• Manufacturer Part Number: STL85N6F3
• Description: MOSFET N-CH 60V 19A POWERFLAT5X6
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STL85N6F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 85A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 3400pF @ 25V
• Power - Max: 4W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (6 x 5)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10882-2

Electrical characteristics
2
4/10
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
C
I
I
DS(on)
C
C
GS(th)
Q
Q
DSS
GSS
Q
oss
rss
iss
gs
gd
g
=25 °C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
V
V
V
V
(see Figure 3)
I
V
V
V
V
V
D
GS
GS
DS
DD
DS
DS
GS
DS
GS
= 250 µA, V
=0
=30 V, I
= V
= 10 V, I
=25 V, f=1 MHz,
=10 V
= Max rating,
= Max rating @125°C
= ±20 V
Test conditions
Test conditions
GS
, I
D
D
D
= 19 A
= 8.5A
= 250 µA
GS
= 0
Min.
Min.
60
2
0.005
Typ.
3400
Typ.
TBD
TBD
650
60
60
0.0057
Max.
Max.
±
STL85N6F3
100
200
10
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
nA
Ω
V
V