FDZ192NZ Fairchild Semiconductor, FDZ192NZ Datasheet

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FDZ192NZ

Manufacturer Part Number
FDZ192NZ
Description
MOSFET N-CH 20V 6-WLCSP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDZ192NZ

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
39 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1220pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
6-WLCSP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2010 Fairchild Semiconductor Corporation
FDZ192NZ Rev.C1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDZ192NZ
N-Channel 1.5 V Specified PowerTrench
20 V, 5.3 A, 39 mΩ
Features
V
V
I
P
T
R
R
D
J
DS
GS
D
θJA
θJA
Max r
Max r
Max r
Max r
Occupies only 1.5 mm
area of 2 x 2 BGA
Ultra-thin package: less than 0.65 mm height when mounted
to PCB
HBM ESD protection level > 2200V (Note3)
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
8
= 39 mΩ at V
= 43 mΩ at V
= 49 mΩ at V
= 55 mΩ at V
D
Drain to Source Voltage
Gate to Source Voltage
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
BOTTOM
S
D
2
of PCB area.Less than 50% of the
GS
GS
GS
GS
S
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= 1.5 V, I
S
-Continuous
-Pulsed
FDZ192NZ
Device
WL-CSP 1x1.5 Thin
G
D
D
D
D
= 2.0 A
= 2.0 A
= 1.0 A
= 1.0 A
PIN1
T
A
= 25 °C unless otherwise noted
Parameter
WL-CSP 1x1.5 Thin
Package
TOP
1
T
T
T
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench
with state of the art "fine pitch" WLCSP packaging process, the
FDZ192NZ minimizes both PCB space and r
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low r
Applications
A
A
A
= 25°C
= 25°C
= 25°C
Battery management
Load switch
Battery protection
®
Thin WL-CSP MOSFET
Reel Size
7 ”
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
Tape Width
8 mm
-55 to +150
Ratings
DS(on)
133
5.3
1.9
0.9
20
±8
15
65
.
January 2010
www.fairchildsemi.com
5000 units
Quantity
DS(on)
®
process
Units
°C/W
. This
°C
W
V
V
A

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FDZ192NZ Summary of contents

Page 1

... General Description = 2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench D with state of the art "fine pitch" WLCSP packaging process, the = 2 FDZ192NZ minimizes both PCB space and r = 1.0 A advanced WLCSP MOSFET embodies a breakthrough in D packaging technology which enables the device to combine = 1 excellent thermal transfer characteristics, ultra-low profile ...

Page 2

... Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDZ192NZ Rev. °C unless otherwise noted J Test Conditions = 250 µ ...

Page 3

... T J Figure 3. Normalized On- Resistance vs Junction Temperature 15 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 0.6 0.8 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDZ192NZ Rev. °C unless otherwise noted 2 1.8 V µ s 0.6 0.8 1 100 125 150 - ...

Page 4

... GATE TO SOURCE VOLTAGE ( Figure 9. Gate Leakage Current vs Gate to Source Voltage 100 Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDZ192NZ Rev. °C unless otherwise noted J 2000 1000 0.1 0. Figure 10. Forward Bias Safe Operating Area - PULSE WIDTH (sec iss C oss ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 0.1 0. Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDZ192NZ Rev. °C unless otherwise noted J SINGLE PULSE 133 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR PEAK T ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDZ192NZ Rev.C1 6 www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDZ192NZ Rev.C1 ® FlashWriter * PDP SPM™ FPS™ Power-SPM™ F-PFS™ PowerTrench ® FRFET PowerXS™ ...

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