FDZ192NZ Fairchild Semiconductor, FDZ192NZ Datasheet - Page 4

• Manufacturer Part Number: FDZ192NZ
• Description: MOSFET N-CH 20V 6-WLCSP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDZ192NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1220pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-WLCSP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDZ192NZ Rev.C1
Typical Characteristics
10
10
10
10
10
10
10
10
10
4.5
3.6
2.7
1.8
0.9
0.0
Figure 7.
-1
-2
-3
-4
-5
-6
-7
-8
-9
100
Figure 9. Gate Leakage Current vs
0
0
10
10
1
-3
I
D
= 5.3 A
V
DS
= 0 V
V
3
3
Gate Charge Characteristics
GS ,
Gate to Source Voltage
GATE TO SOURCE VOLTAGE (V)
Q
V
DD
g
, GATE CHARGE (nC)
T
T
J
= 8 V
J
V
= 125
= 25
6
6
DD
= 12 V
o
o
C
10
Figure 11. Single Pulse Maximum Power Dissipation
C
-2
V
T
DD
J
9
9
= 25 °C unless otherwise noted
= 10 V
12
12
t, PULSE WIDTH (sec)
10
15
15
-1
4
Figure 10. Forward Bias Safe Operating Area
0.01
2000
1000
0.1
100
20
10
50
1
0.01
0.1
1
Figure 8.
f = 1 MHz
V
THIS AREA IS
LIMITED BY r
GS
SINGLE PULSE
T
R
T
J
A
θ
JA
= MAX RATED
= 25
= 0 V
= 133
V
V
o
DS
DS
C
to Source Voltage
, DRAIN to SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
o
C/W
DS(on)
0.1
1
10
SINGLE PULSE
R
T
A
θ
JA
1
= 25
= 133
C
C
C
iss
oss
rss
o
C
10
o
C/W
www.fairchildsemi.com
100 ms
1 ms
10 ms
10 s
1 s
DC
10
1000
20
50