FDZ192NZ Fairchild Semiconductor, FDZ192NZ Datasheet - Page 2

• Manufacturer Part Number: FDZ192NZ
• Description: MOSFET N-CH 20V 6-WLCSP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDZ192NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1220pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-WLCSP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDZ192NZ Rev.C1
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
BV
∆BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
∆V
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
the user's board design.
iss
oss
rss
∆T
∆T
g
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
a. 65 °C/W when mounted on
a 1 in
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
2
= 25 °C unless otherwise noted
pad of 2 oz copper.
V
V
V
V
f = 1 MHz
I
I
V
V
V
I
V
V
V
V
V
T
V
V
I
D
D
D
F
DD
GS
GS
DS
GS
GS
GS
GS
GS
GS
GS
J
DS
DS
GS
= 5.3 A, di/dt = 100 A/µs
= 250 µA, V
= 250 µA, referenced to 25 °C
= 250 µA, referenced to 25 °C
=125 °C
= 0 V to 4.5 V
= 10 V, V
= 10 V, I
= 4.5 V, R
= 16 V, V
= 5 V, I
= 0 V, I
= ±8 V, V
= V
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= 1.5 V, I
= 4.5 V, I
2
DS
Test Conditions
, I
D
S
D
D
D
D
D
D
D
= 5.3 A
= 1.1 A
GS
GS
DS
GS
= 250 µA
GEN
= 5.3 A,
= 2.0 A
= 2.0 A
= 1.0 A
= 1.0 A
= 2.0 A,
= 0 V
= 0 V
= 0 V,
= 0 V
V
I
= 6 Ω
D
DD
= 5.3 A
= 10 V,
(Note 2)
θJC
is guaranteed by design while R
b. 133 °C/W when mounted on a
Min
0.4
minimum pad of 2 oz copper.
20
Typ
915
145
100
0.6
4.6
0.7
6.5
1.3
2.3
18
10
26
29
33
38
31
36
50
20
12
-3
4
θCA
1220
Max
±10
195
150
1.0
1.2
39
43
49
55
47
13
10
80
32
17
32
10
www.fairchildsemi.com
1
is determined by
mV/°C
mV/°C
Units
mΩ
µA
µA
nC
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
V
S
V