STD65N55LF3 STMicroelectronics, STD65N55LF3 Datasheet - Page 4

• Manufacturer Part Number: STD65N55LF3
• Description: MOSFET N-CH 55V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD65N55LF3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10877-2

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
R
CASE
V
(BR)DSS
C
I
I
C
DS(on)
C
Q
Q
GS(th)
GSS
DSS
Q
oss
rss
iss
gs
gd
g
= 25 °C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
Voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Static
Dynamic
DS
= 0)
Parameter
GS
Parameter
= 0)
Doc ID 16371 Rev 2
I
V
V
V
V
V
V
D
V
V
V
V
(see
GS
GS
GS
DS
DS
DS
GS
GS
DS
DD
= 250 µA, V
= Max rating,
= Max rating,Tc = 125 °C
= V
= ± 20 V
= 10 V, I
= 5 V, I
= 27.5 V, I
= 25 V, f=1 MHz,
=0
= 5 V
Figure
Test conditions
Test conditions
GS
, I
D
D
D
= 32 A
16)
= 250 µA
= 32 A
GS
D
= 65 A
= 0
Min. Typ. Max. Unit
Min. Typ. Max. Unit
55
1
-
-
2200
470
7.0
8.5
35
20
8
8
STD65N55LF3
±
100
2.5
8.5
200
10
12
-
-
mΩ
mΩ
µA
µA
nA
nC
nC
nC
pF
pF
pF
V
V