STD65N55LF3 STMicroelectronics, STD65N55LF3 Datasheet - Page 5

• Manufacturer Part Number: STD65N55LF3
• Description: MOSFET N-CH 55V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD65N55LF3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10877-2

STD65N55LF3
Table 6.
Table 7.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
Symbol
t
t
I
I
d(on)
d(off)
V
SDM
RRM
I
Q
t
SD
t
t
SD
r
rr
f
rr
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (inductive load)
Source drain diode
Parameter
Parameter
Doc ID 16371 Rev 2
(1)
V
R
(see
I
I
di/dt =100 A/µs,
V
(see
SD
SD
DD
G
DD
= 4.7 Ω, V
=65 A, V
=65 A,
= 27 V, I
Test conditions
Test conditions
=30 V, Tj=150 °C
Figure
Figure
15)
GS
D
17)
= 32 A,
GS
=0
=10 V
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
10
25
50
10
40
60
3
Max.
Max.
320
1.5
80
-
-
Unit
Unit
nC
ns
ns
ns
ns
ns
5/13
A
A
V
A