STD65N55LF3 STMicroelectronics, STD65N55LF3 Datasheet - Page 6

• Manufacturer Part Number: STD65N55LF3
• Description: MOSFET N-CH 55V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD65N55LF3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10877-2

Electrical characteristics
2.1
6/13
Figure 2.
Figure 4.
Figure 6.
100
0.1
(norm)
BV
(A)
10
I
D
1
1.10
1.00
1.05
0.95
0.90
200
150
100
0.1
(A)
DSS
50
I
D
0
-75
0
Electrical characteristics (curves)
Safe operating area
Output characteristics
Normalized B
1
-25
1
2
V
GS
25
=10V
3
10
VDSS
75
4
Tj=175°C
Tc=25°C
Single pulse
100
vs temperature
5
125
V
6
DS
175
4V
(V)
5V
Doc ID 16371 Rev 2
100µs
1ms
10ms
AM08207v1
AM08208v1
AM08210v1
V
6V
DS
T
J
(°C)
(V)
Figure 3.
Figure 5.
Figure 7.
R
DS(on)
200
100
7.00
6.60
6.40
150
(Ohm)
7.20
6.80
6.20
(A)
50
I
D
0
0
0
Thermal impedance
Transfer characteristics
Static drain-source on resistance
10
2
V
DS
20
=7V
4
V
30
GS
=10V
40
6
50
STD65N55LF3
8
60
AM08209v1
AM08211v1
V
I
D
GS
(A)
(V)