STP34NM60N STMicroelectronics, STP34NM60N Datasheet - Page 13

• Manufacturer Part Number: STP34NM60N
• Description: MOSFET N-CH 600V 29A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP34NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2722pF @ 100V
• Power - Max: 210W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Formed Leads
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.092 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 29 A
• Power Dissipation: 210 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10884-5

STF34NM60N, STP34NM60N, STW34NM60N
Package mechanical data
Figure 25. TO-220 type A drawing
0015988_typeA_Rev_S
Doc ID 17740 Rev 3
13/17