STP34NM60N STMicroelectronics, STP34NM60N Datasheet - Page 5

• Manufacturer Part Number: STP34NM60N
• Description: MOSFET N-CH 600V 29A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP34NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2722pF @ 100V
• Power - Max: 210W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Formed Leads
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.092 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 29 A
• Power Dissipation: 210 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10884-5

STF34NM60N, STP34NM60N, STW34NM60N
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Symbol
I
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 17740 Rev 3
I
I
di/dt=100 A/µs
(see
I
di/dt=100 A/µs,
T
(see
SD
SD
SD
J
= 150 °C
Test conditions
= 29 A, V
= 29 A, V
= 29 A,V
Figure
Figure
20)
20)
DD
GS
DD
= 60 V
= 0
= 60 V
Electrical characteristics
Min.
-
-
-
-
Typ.
408
480
39
10
42
8
Max.
116
1.6
29
Unit
nC
nC
ns
ns
A
A
V
A
A
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