STP34NM60N STMicroelectronics, STP34NM60N Datasheet - Page 7

• Manufacturer Part Number: STP34NM60N
• Description: MOSFET N-CH 600V 29A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP34NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2722pF @ 100V
• Power - Max: 210W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Formed Leads
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.092 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 29 A
• Power Dissipation: 210 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10884-5

STF34NM60N, STP34NM60N, STW34NM60N
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations
10000
I
1000
D
V
100
(V)
(pF)
(A)
80
40
20
70
60
50
10
12
10
10
30
GS
C
0
6
2
8
4
0
1
0
0
0.1
Output characteristics
V
2
DS
5
V
GS
4
=10V
1
10
6
V
15
DD
I
8
D
=29A
=480V
10
10
20
12 14 16
25
100
6V
5V
30
V
DS
Doc ID 17740 Rev 3
V
Q
AM09020v1
AM09022v1
AM09024v1
DS
g
(V)
250
150
(nC)
100
50
0
400
350
300
200
Ciss
Crss
(V)
Coss
Figure 9.
Figure 13. Output capacitance stored energy
R
0.096
0.098
0.086
0.094
0.092
0.090
0.088
I
DS(on)
E
D
(µJ)
(Ω)
oss
(A)
10
80
70
60
50
30
20
40
2
1
0
0
0
0
0
Transfer characteristics
100
5
2
V
10
GS
200
=10V
4
Electrical characteristics
15
V
DS
300
=20V
20
6
400
25
8
500
30
AM09021v1
V
AM09023v1
AM09025v1
V
I
GS
D
DS
(A)
(V)
(V)
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