BPV11F Vishay, BPV11F Datasheet - Page 2

• Manufacturer Part Number: BPV11F
• Description: Photodetector Transistors 15 Degree 150mW
• Manufacturer: Vishay
• Type: IR Chipr

Specifications of BPV11F

• Maximum Power Dissipation: 150 mW
• Maximum Dark Current: 50 nA
• Collector- Emitter Voltage Vceo Max: 70 V
• Maximum Operating Temperature: + 100 C
• Package / Case: T-1 3/4
• Transistor Polarity: NPN
• Wavelength Typ: 930nm
• Power Consumption: 150mW
• Viewing Angle: 15°
• No. Of Pins: 2
• Light Current: 9mA
• Dark Current: 50nA
• C-e Breakdown Voltage: 70V
• Current Rating: 50mA
• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 10mA
• Current - Dark (id) (max): 50nA
• Wavelength: 930nm
• Power - Max: 150mW
• Mounting Type: Through Hole
• Orientation: Top View
• Transistor Case Style: T-1 3/4 (5mm)
• Svhc: No SVHC (20-Jun-2011)
• Current Ic Typ: 9mA
• Rohs Compliant: Yes
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 70V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.3V
• Dark Current (max): 50nA
• Power Dissipation: 150mW
• Peak Wavelength: 930nm
• Half-intensity Angle: 30deg
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Note
T
BASIC CHARACTERISTICS
T
Document Number: 81505
Rev. 1.6, 05-Sep-08
amb
amb
BASIC CHARACTERISTICS
PARAMETER
Collector emitter breakdown voltage
Collector emitter dark current
DC current gain
Collector emitter capacitance
Collector base capacitance
Collector light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
Fig. 2 - Collector Dark Current vs. Ambient Temperature
= 25 °C, unless otherwise specified
94 8249
94 8300
200
160
120
10
10
10
10
10
80
40
0
4
3
2
1
20
0
T
T
amb
amb
20
40
- Ambient Temperature (°C)
- Ambient Temperature (°C)
V
CE
40
= 10 V
Silicon NPN Phototransistor, RoHS Compliant
60
60
For technical questions, contact: [e-mail]
V
V
V
S
S
S
E
E
V
80
V
V
R
e
e
= 5 V, I
= 5 V, I
= 5 V, I
80
CE
CE
CE
thJA
= 1 mW/cm
= 1 mW/cm
TEST CONDITION
= 5 V, I
= 0 V, f = 1 MHz, E = 0
= 0 V, f = 1 MHz, E = 0
V
CE
C
C
C
100
I
V
I
100
= 10 V, E = 0
C
C
= 5 mA, R
= 5 mA, R
= 5 mA, R
CB
= 1 mA
= 1 mA
C
= 5 mA, E = 0
= 5 V
2
2
, λ = 950 nm,
, λ = 950 nm,
L
L
L
= 100 Ω
= 100 Ω
= 100 Ω
SYMBOL
V
Fig. 3 - Relative Collector Current vs. Ambient Temperature
V
(BR)CEO
C
C
I
λ
h
CEO
CEsat
t
t
I
λ
CEO
CBO
f
ca
ϕ
on
off
FE
0.5
c
p
94 8239
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
MIN.
70
3
T
V
E
λ
amb
CE
e
20
= 1 mW/cm
= 950 nm
= 5 V
- Ambient Temperature (°C)
Vishay Semiconductors
900 to 980
40
TYP.
± 15
450
930
130
110
15
19
2
1
9
6
5
60
MAX.
300
80
50
BPV11F
www.vishay.com
100
UNIT
kHz
deg
mA
mV
nm
nm
nA
pF
pF
µs
µs
V
347