BPV11F Vishay, BPV11F Datasheet - Page 3

• Manufacturer Part Number: BPV11F
• Description: Photodetector Transistors 15 Degree 150mW
• Manufacturer: Vishay
• Type: IR Chipr

Specifications of BPV11F

• Maximum Power Dissipation: 150 mW
• Maximum Dark Current: 50 nA
• Collector- Emitter Voltage Vceo Max: 70 V
• Maximum Operating Temperature: + 100 C
• Package / Case: T-1 3/4
• Transistor Polarity: NPN
• Wavelength Typ: 930nm
• Power Consumption: 150mW
• Viewing Angle: 15°
• No. Of Pins: 2
• Light Current: 9mA
• Dark Current: 50nA
• C-e Breakdown Voltage: 70V
• Current Rating: 50mA
• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 10mA
• Current - Dark (id) (max): 50nA
• Wavelength: 930nm
• Power - Max: 150mW
• Mounting Type: Through Hole
• Orientation: Top View
• Transistor Case Style: T-1 3/4 (5mm)
• Svhc: No SVHC (20-Jun-2011)
• Current Ic Typ: 9mA
• Rohs Compliant: Yes
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 70V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.3V
• Dark Current (max): 50nA
• Power Dissipation: 150mW
• Peak Wavelength: 930nm
• Half-intensity Angle: 30deg
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

BPV11F
Vishay Semiconductors
www.vishay.com
348
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
94 8244
94 8245
94 8250
0.01
100
100
800
600
400
200
Fig. 4 - Collector Light Current vs. Irradiance
0.1
0.1
10
10
Fig. 6 - Amplification vs. Collector Current
1
1
0
0.01
0.01
0.1
λ = 950 nm
V
CE
- Collector Emitter Voltage (V)
I
E
C
0.1
e
- Collector Current (mA)
- Irradiance (mW/cm²)
0.1
1
0.05 mW/cm
0.02 mW/cm
E
V
0.1 mW/cm
0.5 mW/cm
0.2 mW/cm
e
CE
= 1 mW/cm
= 5 V
1
λ = 950 nm
V
CE
For technical questions, contact: [e-mail]
= 5 V
2
2
2
2
10
2
1
2
10
Silicon NPN Phototransistor, RoHS Compliant
100
100
10
Fig. 8 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 7 - Collector Base Capacitance vs. Collector Base Voltage
94 8247
94 8253
Fig. 9 - Turn-on/Turn-off Time vs. Collector Current
94 8246
20
16
12
12
10
20
16
12
8
6
4
2
0
8
4
0
8
4
0
0.1
0
0.1
V
CE
V
CB
I
- Collector Ermitter Voltage (V)
C
4
- Collector Base Voltage (V)
- Collector Current (mA)
1
1
8
λ = 950 nm
R
f = 1 MHz
V
f = 1 MHz
L
CE
= 100 Ω
= 5 V
10
12
Document Number: 81505
10
t
on
t
off
Rev. 1.6, 05-Sep-08
16
100
100