ZXMN20B28KTC Diodes Inc, ZXMN20B28KTC Datasheet - Page 5

• Manufacturer Part Number: ZXMN20B28KTC
• Description: MOSFET Power ENHANCE MODE MOSFET 200V N-CHANNEL
• Manufacturer: Diodes Inc

Specifications of ZXMN20B28KTC

• Gate Charge Qg: 8.1 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 750 mOhms
• Forward Transconductance Gfs (max / Min): 6.13 S
• Drain-source Breakdown Voltage: 200 V
• Continuous Drain Current: 2.3 A
• Power Dissipation: 4.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
0.01
Typical Transfer Characteristics
0.1
0.1
On-Resistance v Drain Current
10
10
0.01
1
1
1
T = 25°C
V
0.1
DS
V
V
= 10V
DS
GS
Output Characteristics
T = 150°C
Drain-Source Voltage (V)
2V
Gate-Source Voltage (V)
I
D
0.1
Drain Current (A)
2
1
1
2.5V
T = 25°C
10V
T = 25°C
3V
10
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3.5V
10
3.5V
2.5V
V
V
2V
10V
3V
GS
GS
3
5 of 8
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
1E-3
0.01
0.01
0.1
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
1
1
-50
0.2
T = 150°C
0.1
V
V
Tj Junction Temperature (°C)
T = 150°C
DS
SD
Output Characteristics
0.4
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
Diodes Incorporated
A Product Line of
1
0.6
50
V
I
D
GS
= 2.75A
T = 25°C
= 10V
Vgs = 0V
100
0.8
V
I
D
V
GS
10
= 250uA
GS(th)
10V
= V
R
DS(on)
2.5V
1.5V
V
DS
2V
3V
ZXMN20B28K
GS
150
1.0
© Diodes Incorporated
October 2009