ZXMN20B28KTC Diodes Inc, ZXMN20B28KTC Datasheet - Page 6

• Manufacturer Part Number: ZXMN20B28KTC
• Description: MOSFET Power ENHANCE MODE MOSFET 200V N-CHANNEL
• Manufacturer: Diodes Inc

Specifications of ZXMN20B28KTC

• Gate Charge Qg: 8.1 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 750 mOhms
• Forward Transconductance Gfs (max / Min): 6.13 S
• Drain-source Breakdown Voltage: 200 V
• Continuous Drain Current: 2.3 A
• Power Dissipation: 4.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics - continued
Test Circuits
ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
90%
10%
V
V
DS
GS
V
G
800
600
400
200
Q
Capacitance v Drain-Source Voltage
GS
t
0.01
0
Basic gate charge waveform
d(on)
Switching time waveforms
t
(on)
V
t
DS
r
- Drain - Source Voltage (V)
0.1
Q
Q
G
C
GD
RSS
Charge
1
t
d(off)
t
(on)
10
t
r
V
f = 1MHz
C
GS
ISS
= 0V
C
www.diodes.com
OSS
100
6 of 8
Gate-Source Voltage v Gate Charge
10
8
6
4
2
0
0
Switching time test circuit
Gate charge test circuit
2
12V
R
Q - Charge (nC)
4
G
Diodes Incorporated
A Product Line of
6
V
regulator
Current
GS
50k
I
8
G
V
GS
10
R
Same as
D.U.T
V
I
D
D
D.U.T
DS
= 6.5A
12
= 120V
V
ZXMN20B28K
DS
14
I
V
D
© Diodes Incorporated
DS
V
October 2009
DD