ZXMN20B28KTC Diodes Inc, ZXMN20B28KTC Datasheet - Page 7

• Manufacturer Part Number: ZXMN20B28KTC
• Description: MOSFET Power ENHANCE MODE MOSFET 200V N-CHANNEL
• Manufacturer: Diodes Inc

Specifications of ZXMN20B28KTC

• Gate Charge Qg: 8.1 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 750 mOhms
• Forward Transconductance Gfs (max / Min): 6.13 S
• Drain-source Breakdown Voltage: 200 V
• Continuous Drain Current: 2.3 A
• Power Dissipation: 4.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Package Outline Dimensions
ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
DIM
A1
D1
b2
b3
c2
E1
A
D
E
b
c
0.086
0.020
0.030
0.205
0.018
0.018
0.213
0.205
0.250
0.170
Min
-
Inches
0.094
0.005
0.035
0.045
0.215
0.024
0.023
0.245
0.265
Max
-
-
0.508
0.762
0.457
0.457
2.18
5.21
5.41
5.21
6.35
4.32
Min
-
Millimeters
0.127
0.584
Max
2.39
0.89
1.14
5.46
0.61
6.22
6.73
-
-
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DIM
θ1°
L1
L2
L3
L4
L5
θ°
H
e
L
-
0.370
0.055
0.035
0.025
0.045
Min
0°
0°
-
0.090 BSC
0.108 REF
0.020 BSC
Diodes Incorporated
Inches
A Product Line of
0.410
0.070
0.065
0.040
0.060
Max
10°
15°
-
0.635
9.40
1.40
0.89
1.14
Min
ZXMN20B28K
0°
0°
-
Millimeters
0.508 BSC
2.29 BSC
2.74 REF
© Diodes Incorporated
October 2009
10.41
1.016
Max
1.78
1.65
1.52
10°
15°
-