SUP75P03-07-E3 Vishay, SUP75P03-07-E3 Datasheet - Page 4

• Manufacturer Part Number: SUP75P03-07-E3
• Description: MOSFET Power 30V 75A 187W
• Manufacturer: Vishay

Specifications of SUP75P03-07-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.01 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Continuous Drain Current Id: -75A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 10mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SUB75P03-07, SUP75P03-07
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
1000
100
1.8
1.5
1.2
0.9
0.6
0.3
0.1
0.00001
10
0
1
- 50
On-Resistance vs. Junction Temperature
V
I
- 25
I
D
AV
GS
= 30 A
0.0001
(A) at T
= 10 V
Avalanche Current vs. Time
0
T
J
- Junction Temperature (°C)
A
25
= 150 °C
0.001
50
t
in
I
(s)
AV
75
(A) at T
0.01
100
A
= 25 °C
125
0.1
150
175
1
100
10
45
40
35
30
25
1
- 50 - 25
0
Source-Drain Diode Forward Voltage
I
D
= 250 µA
0.2
V
0
vs. Junction Temperature
Drain Source Breakdown
T
SD
J
- Junction Temperature (°C)
- Source-to-Drain Voltage (V)
25
0.4
50
T
J
= 150 °C
S10-2429-Rev. E, 25-Oct-10
Document Number: 71109
75
0.6
100
125
0.8
T
J
= 25 °C
150
175
1.0