SUP75P03-07-E3 Vishay, SUP75P03-07-E3 Datasheet - Page 5

• Manufacturer Part Number: SUP75P03-07-E3
• Description: MOSFET Power 30V 75A 187W
• Manufacturer: Vishay

Specifications of SUP75P03-07-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.01 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Continuous Drain Current Id: -75A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 10mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 71109
S10-2429-Rev. E, 25-Oct-10
0.01
0.1
90
75
60
45
30
15
2
1
0
10
0
- 4
www.vishay.com/ppg?71109.
Duty Cycle = 0.5
0.2
0.1
Maximum Avalanche and Drain Current
25
Single Pulse
0.02
0.05
T
vs. Case Temperature
50
C
- Case Temperature (°C)
75
10
- 3
100
Normalized Thermal Transient Impedance, Junction-to-Case
125
150
Square Wave Pulse Duration (s)
10
175
- 2
SUB75P03-07, SUP75P03-07
1000
100
0.1
10
10
1
0.1
- 1
* V
GS
V
minimum V
DS
Single Pulse
Safe Operating Area
- Drain-to-Source Voltage (V)
T
by R
C
Limited
1
= 25 °C
DS(on) *
GS
at which R
1
Vishay Siliconix
DS(on)
10
www.vishay.com
is specified
100 µs
1 ms
10 ms
100 ms
DC
100
10
5