IRF9630SPBF Vishay, IRF9630SPBF Datasheet - Page 4

• Manufacturer Part Number: IRF9630SPBF
• Description: MOSFET Power P-Chan 200V 6.5 Amp
• Manufacturer: Vishay

Specifications of IRF9630SPBF

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.8 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.7 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SMD-220
• Continuous Drain Current Id: -6.5A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF9630S, SiHF9630S
Vishay Siliconix
www.vishay.com
4
91085_05
91085_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1200
1000
800
600
400
200
20
16
12
0
8
4
0
10
0
0
I
D
= - 6.5 A
- V
5
DS ,
Q
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
10
DS
= - 40 V
V
C
C
C
V
GS
iss
rss
oss
DS
15
= C
= 0 V, f = 1 MHz
= C
= C
= - 100 V
10
gs
gd
ds
V
1
+ C
DS
+ C
20
= - 160 V
gd
gd
For test circuit
see figure 13
, C
ds
25
Shorted
C
C
C
oss
iss
rss
30
91085_07
91085_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
0.1
10
1
0
-1
2
5
2
5
2
5
2
5
2
1
3
Fig. 8 - Maximum Safe Operating Area
0.5
0.1
2
- V
- V
5
SD
DS
Operation in this area limited
1.5
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
1
150
2
°
T
T
Single Pulse
C
C
J
by R
= 150 °C
= 25 °C
5
2.5
10
DS(on)
S10-2554-Rev. B, 08-Nov-10
2
Document Number: 91085
25
5
°
C
10
3.5
2
V
GS
2
10
100
1
10
ms
= 0 V
µs
ms
5
µs
10
4.5
3