IRF9630SPBF Vishay, IRF9630SPBF Datasheet - Page 5

• Manufacturer Part Number: IRF9630SPBF
• Description: MOSFET Power P-Chan 200V 6.5 Amp
• Manufacturer: Vishay

Specifications of IRF9630SPBF

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.8 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.7 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SMD-220
• Continuous Drain Current Id: -6.5A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 91085
S10-2554-Rev. B, 08-Nov-10
91085_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
91085_11
25
10
0.1
10
-2
1
10
50
-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
T
C
, Case Temperature (°C)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
10
100
-4
Single Pulse
(Thermal Response)
125
10
t
-3
1
150
, Rectangular Pulse Duration (s)
10
-2
10 %
90 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
0.1
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
- 10 V
V
IRF9630S, SiHF9630S
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
DS
t
r
1
j
= P
P
DM
D.U.T.
DM
R
Vishay Siliconix
x Z
D
t
t
1
d(off)
1
thJC
/t
2
t
+ T
2
t
f
C
10
+
-
www.vishay.com
V
DD
5