IRF9630SPBF Vishay, IRF9630SPBF Datasheet - Page 6

• Manufacturer Part Number: IRF9630SPBF
• Description: MOSFET Power P-Chan 200V 6.5 Amp
• Manufacturer: Vishay

Specifications of IRF9630SPBF

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.8 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.7 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SMD-220
• Continuous Drain Current Id: -6.5A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF9630S, SiHF9630S
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
- 10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
- 10 V
g
Q
V
GS
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T.
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
91085_12c
1200
1000
800
600
400
200
0
25
V
DD
Starting T
+
-
= - 50 V
V
DD
50
J
, Junction Temperature (°C)
75
100
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
125
V
I
AS
DS
12 V
Fig. 13b - Gate Charge Test Circuit
V
- 2.9 A
- 4.1 A
- 6.5 A
GS
Same type as D.U.T.
I
D
Current regulator
150
0.2 µF
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
t
p
I
G
S10-2554-Rev. B, 08-Nov-10
Document Number: 91085
D.U.T.
V
I
D
DS
+
-
V
V
DS
DD