PSMN5R8-40YS,115 NXP Semiconductors, PSMN5R8-40YS,115 Datasheet - Page 10

• Manufacturer Part Number: PSMN5R8-40YS,115
• Description: MOSFET N-CH 40V LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN5R8-40YS,115

• Input Capacitance (ciss) @ Vds: 1703pF @ 20V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 28.8nC @ 10V
• Power - Max: 89W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.7 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 64 A, 90 A
• Power Dissipation: 89 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5594-2

NXP Semiconductors
PSMN5R8-40YS
Product data sheet
Fig 17. Source current as a function of source-drain voltage; typical values
(A)
I
100
S
80
60
40
20
0
0
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 25 October 2010
0.3
T
j
= 175 °C
N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET
0.6
0.9
T
j
= 25 °C
V
003aae231
SD
(V)
1.2
PSMN5R8-40YS
© NXP B.V. 2010. All rights reserved.
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