PSMN5R8-40YS,115 NXP Semiconductors, PSMN5R8-40YS,115 Datasheet - Page 6

• Manufacturer Part Number: PSMN5R8-40YS,115
• Description: MOSFET N-CH 40V LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN5R8-40YS,115

• Input Capacitance (ciss) @ Vds: 1703pF @ 20V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 28.8nC @ 10V
• Power - Max: 89W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.7 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 64 A, 90 A
• Power Dissipation: 89 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5594-2

NXP Semiconductors
6. Characteristics
Table 6.
PSMN5R8-40YS
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
internal gate resistance (AC)
total gate charge
gate-source charge
pre-threshold gate-source
charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 25 October 2010
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
f = 1 MHz
I
I
see
I
see
I
see
I
see
V
T
V
R
D
D
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
G(ext)
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 0 A; V
= 75 A; V
= 75 A; V
= 75 A; V
= 75 A; V
= 25 °C; see
Figure 10
Figure 10
Figure
Figure 12
Figure 12
Figure 13
Figure
Figure 14
Figure
Figure
= 40 V; V
= 40 V; V
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 20 V; V
= 20 V; R
= 4.7 Ω
N-channel LFPAK 40 V 5.7 mΩ standard level MOSFET
DS
11; see
14; see
14; see
14; see
DS
DS
DS
DS
DS
DS
DS
D
D
D
= 0 V; V
GS
GS
DS
GS
L
GS
GS
DS
= 15 A; T
= 15 A; T
= 15 A; T
= 20 V; V
= 20 V; V
= 20 V; V
= 20 V;
= V
= V
= V
Figure 16
= 0.3 Ω; V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 10
Figure 15
Figure 15
Figure 15
; T
; T
; T
GS
j
j
j
j
j
j
GS
GS
GS
= 10 V
j
j
j
= -55 °C;
= 175 °C;
= 25 °C;
= 100 °C;
= 175 °C;
= 25 °C;
j
j
j
GS
= 25 °C
= 125 °C
= 25 °C
= -55 °C
= 25 °C
= 25 °C
= 10 V;
= 10 V;
= 10 V;
= 10 V;
PSMN5R8-40YS
Min
36
40
-
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
3
0.02
10
10
10
-
-
4.4
0.53
23.8
28.8
9.8
5.1
4.7
7.8
5.7
1703
384
213
16
12
25
8
© NXP B.V. 2010. All rights reserved.
-
Max
-
-
4.6
-
4
1
100
100
100
7.7
10.26
5.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
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