PSMN5R8-30LL,115 NXP Semiconductors, PSMN5R8-30LL,115 Datasheet

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PSMN5R8-30LL,115

Manufacturer Part Number
PSMN5R8-30LL,115
Description
MOSFET N-CH 30V QFN3333
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN5R8-30LL,115

Input Capacitance (ciss) @ Vds
1316pF @ 15V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.8 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
24nC @ 10V
Power - Max
55W
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5.8 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
40 A
Power Dissipation
55 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5593-2
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is
designed and qualified for use in a wide range of industrial, communications and power
supply equipment.
Table 1.
Symbol
V
I
P
T
Static characteristics
R
D
j
DS
tot
DSon
PSMN5R8-30LL
N-channel QFN3333 30 V 5.8 mΩ logic level MOSFET
Rev. 2 — 18 August 2010
High efficiency due to low switching
and conduction losses
Small footprint for compact designs
Battery protection
DC-to-DC converters
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
junction
temperature
drain-source
on-state
resistance
Conditions
T
T
see
T
V
T
V
T
V
T
see
j
mb
mb
j
j
j
GS
GS
GS
≥ 25 °C; T
= 25 °C; see
= 100 °C; see
= 25 °C; see
Figure 1
Figure 13
= 25 °C; V
= 25 °C; see
= 4.5 V; I
= 10 V; I
= 10 V; I
j
D
D
≤ 150 °C
D
GS
= 10 A;
= 10 A;
= 10 A;
Figure 12
Figure
Figure 13
Figure 2
= 10 V;
12;
Suitable for logic level gate drive
sources
Load switching
Power ORing
Min
-
-
-
-55
-
-
-
Product data sheet
Typ
-
-
-
-
6.1
-
5
Max Unit
30
40
55
150
8
7.7
5.8
V
A
W
°C
mΩ
mΩ
mΩ

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PSMN5R8-30LL,115 Summary of contents

Page 1

... PSMN5R8-30LL N-channel QFN3333 30 V 5.8 mΩ logic level MOSFET Rev. 2 — 18 August 2010 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment ...

Page 2

... avalanche energy unclamped; R Simplified outline Transparent top view SOT873-1 (QFN3333) Description plastic thermal enhanced very thin small outline package; no leads; 8 terminals All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN5R8-30LL Min = Figure 14 Figure 14 °C; - j(init) ≤ ...

Page 3

... GS j(init) ≤ unclamped sup 003aae438 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of solder point temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN5R8-30LL Min - = 20 kΩ -20 Figure 1 - Figure ° -55 - ° Ω ...

Page 4

... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN5R8-30LL Product data sheet N-channel QFN3333 30 V 5.8 mΩ logic level MOSFET Limit DSon Conditions see - All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN5R8-30LL =10 μ 100 μ 100 (V) DS Min Typ Figure 4 - 1.3 [ ...

Page 5

... Figure see Figure see Figure 14; see Figure see Figure D DS see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN5R8-30LL Min Typ Max 0 1.3 1.7 2. 2 100 - 5 100 - ...

Page 6

... 003aae441 40 3 (A) 30 2.8 20 2.6 10 2.4 V ( (V) DS Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN5R8-30LL Min Typ - 76 - 200 - 0. 003aae442 = 150 ° ° © NXP B.V. 2010. All rights reserved. ...

Page 7

... I (A) D Fig 8. 003aae447 (V) GS Fig 10. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN5R8-30LL 3000 C 2000 1000 0 0 2.5 5 Input and reverse transfer capacitances as a function of gate-source voltage; typical values (th) (V) ...

Page 8

... R DSon (mΩ) typ max Fig 12. Drain-source on-state resistance as a function 03aa27 120 180 ( ° Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN5R8-30LL 25 2.8 V (V) = 2.4 2 drain current; typical values ...

Page 9

... G Fig 16. Input, output and reverse transfer capacitances ( 150 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN5R8-30LL function of drain-source voltage; typical values 003aae449 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved. ...

Page 10

... 2.4 3.4 1.80 0.55 0.52 0.65 1.95 2.2 3.2 1.58 0.45 0.35 REFERENCES JEDEC JEITA - - - - - - All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN5R8-30LL detail 0.1 0.05 0.1 0.1 EUROPEAN PROJECTION SOT873 ISSUE DATE 10-03-10 19-04-10 © NXP B.V. 2010. All rights reserved. ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN5R8-30LL v.2 20100818 • Modifications: Status changed from objective to product. PSMN5R8-30LL v.1 20100603 PSMN5R8-30LL Product data sheet N-channel QFN3333 30 V 5.8 mΩ logic level MOSFET Data sheet status Change notice Product data sheet ...

Page 12

... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN5R8-30LL © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 18 August 2010 PSMN5R8-30LL Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 18 August 2010 Document identifier: PSMN5R8-30LL ...

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