PSMN5R8-30LL,115 NXP Semiconductors, PSMN5R8-30LL,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN5R8-30LL,115
• Description: MOSFET N-CH 30V QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN5R8-30LL,115

• Input Capacitance (ciss) @ Vds: 1316pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Power - Max: 55W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5593-2

NXP Semiconductors
5. Thermal characteristics
Table 5.
[1]
PSMN5R8-30LL
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Z
R
temperature. In practice R
(K/W)
(A)
th(j-mb)
I
D
th(j-a)
10
10
10
10
10
10
10
-1
-2
-1
1
3
2
1
10
10
values
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
is guaranteed by design and assumes that the device is mounted on a 40mm x 40mm x 70µm copper pad at 20°C ambient
-1
-6
Thermal characteristics
δ = 0.5
0.1
0.05
0.02
0.2
single shot
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
10
th(j-a)
-5
will be determined by the customer’s PCB characteristics
Limit R
DSon
All information provided in this document is subject to legal disclaimers.
10
= V
1
-4
DS
/ I
D
Rev. 2 — 18 August 2010
10
N-channel QFN3333 30 V 5.8 mΩ logic level MOSFET
-3
DC
Conditions
see
Figure 4
10
10
-2
[1]
PSMN5R8-30LL
Min
-
-
V
10
P
DS
-1
(V)
t
100 μ s
10 ms
100 ms
1 ms
p
=10 μ s
t
Typ
1.3
54
p
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003aae439
003aae440
δ =
Max
1.7
60
t
T
p
t
10
1
2
Unit
K/W
K/W
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