PSMN5R8-30LL,115 NXP Semiconductors, PSMN5R8-30LL,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN5R8-30LL,115
• Description: MOSFET N-CH 30V QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN5R8-30LL,115

• Input Capacitance (ciss) @ Vds: 1316pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Power - Max: 55W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 55 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5593-2

NXP Semiconductors
PSMN5R8-30LL
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
6V
10
15V
20
(A)
I
V
S
50
40
30
20
10
DS
0
Q
0
= 24V
All information provided in this document is subject to legal disclaimers.
G
003aae448
(nC)
30
Rev. 2 — 18 August 2010
0.3
T
j
= 150 °C
0.6
N-channel QFN3333 30 V 5.8 mΩ logic level MOSFET
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
0.9
4
3
2
10
T
as a function of drain-source voltage; typical
values
j
= 25 °C
-1
003aae449
V
SD
(V)
1.2
1
PSMN5R8-30LL
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aae445
C
C
C
(V)
rss
iss
oss
10
2
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