BUK9520-100B,127 NXP Semiconductors, BUK9520-100B,127 Datasheet - Page 2

• Manufacturer Part Number: BUK9520-100B,127
• Description: MOSFET N-CH 100V 63A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9520-100B,127

• Input Capacitance (ciss) @ Vds: 5657pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 63A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 53.4nC @ 5V
• Power - Max: 203W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 63 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5227

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK9520-100B_1
Product data sheet
Pin
1
2
3
mb
Type number
BUK9520-100B
Symbol
G
D
S
D
Pinning information
Ordering information
Package
Name
3-lead
TO-220AB;
SC-46;
SFM3
Description
gate
drain
source
mounting base; connected to
drain
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
Rev. 01 — 6 May 2009
Simplified outline
(3-lead TO-220AB; SC-46;
SOT78A
SFM3)
1 2
mb
N-channel TrenchMOS logic level FET
3
BUK9520-100B
Graphic symbol
G
mbb076
© NXP B.V. 2009. All rights reserved.
D
Version
SOT78A
S
2 of 12