BUK7Y35-55B,115 NXP Semiconductors, BUK7Y35-55B,115 Datasheet - Page 2

• Manufacturer Part Number: BUK7Y35-55B,115
• Description: MOSFET N-CH 55V 28.43A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y35-55B,115

• Input Capacitance (ciss) @ Vds: 781pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 28.43A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 13.1nC @ 10V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5520-2

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK7Y35-55B
Product data sheet
Pin
1
2
3
4
mb
Type number
BUK7Y35-55B
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
source
source
source
gate
mounting base; connected to
drain
Package
Name
LFPAK
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 April 2010
Simplified outline
SOT669 (LFPAK)
1 2 3 4
mb
N-channel TrenchMOS standard level FET
Graphic symbol
BUK7Y35-55B
mbb076
G
© NXP B.V. 2010. All rights reserved.
D
S
Version
2 of 14