BUK7Y35-55B,115 NXP Semiconductors, BUK7Y35-55B,115 Datasheet - Page 9

• Manufacturer Part Number: BUK7Y35-55B,115
• Description: MOSFET N-CH 55V 28.43A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7Y35-55B,115

• Input Capacitance (ciss) @ Vds: 781pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 28.43A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 13.1nC @ 10V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5520-2

NXP Semiconductors
BUK7Y35-55B
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
(V)
GS
10
8
6
4
2
0
charge; typical values.
0
V
DS
= 14 V
4
8
V
DS
(A)
I
S
80
60
40
20
= 44 V
12
0
0.4
All information provided in this document is subject to legal disclaimers.
Q
003aac943
G
(nC)
T
0.6
j
16
=175 °C
Rev. 04 — 7 April 2010
0.8
Fig 15. Input, output and reverse transfer capacitances
T
1
j
= 25 °C
(pF)
C
10
10
10
3
2
10
as a function of drain-source voltage; typical
values.
1.2
-1
N-channel TrenchMOS standard level FET
003aac942
V
SD
(V)
1.4
1
BUK7Y35-55B
10
© NXP B.V. 2010. All rights reserved.
V
DS
C
C
C
003aac940
iss
oss
rss
(V)
10
2
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